Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off
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منابع مشابه
Analysis of Voltage Variation in Silicon Carbide MOSFETs during Turn-On and Turn-Off
Due to our limited knowledge about silicon carbide metal–oxide–semiconductor fieldeffect transistors (SiC MOSFETs), the theoretical analysis and change regularity in terms of the effects of temperature on their switching characteristics have not been fully characterized and understood. An analysis of variation in voltage (dVDS/dt) for SiC MOSFET during turn-on and turn-off has been performed th...
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ژورنال
عنوان ژورنال: Energies
سال: 2017
ISSN: 1996-1073
DOI: 10.3390/en10101456